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* Commercial and Consumer Systems * Portable Battery Powered Equipment
RF2128P

* PCS Communication Systems * 2.5GHz ISM Band Applications * Wireless LANs
2
POWER AMPLIFIERS

The RF2128P is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and POS terminals. The part also will function as the final stage in digital PCS phone transmitters requiring linear amplification operating between 1900MHz and 2200MHz, with over 100mW transmitted power, or as the driver stage for the RF2125 high power amplifier. A simple power down function is included for TDD operation. The part is packaged in a low-cost plastic package with a metal backside.
.157 .150 1 .196 .189 .050 .244 .230 8MAX 0MIN .061 .055 .087 .071 .019 .014 .003 .001 EXPOSED HEATSINK .123 .107
.035 .016
.010 .007
Refer to "Handling of PSOP and PSSOP Products" on page 16-15 for special handling information.

Si BJT Si Bi-CMOS
GaAs HBT
SiGe HBT
!
GaAs MESFET Si CMOS
* Single 3.0V to 6.5V Supply * 100mW Linear Output Power * 28dB Small Signal Gain * 33% Efficiency * Digitally Controlled Power Down Mode * 1900MHz to 2500MHz Operation
VCC2 1 GND1 2 PD 3 RF IN 4
BIAS CIRCUITS
8 VCC1 7 RF OUT 6 RF OUT 5 GND 2

RF2128P RF2128P PCBA Medium Power Linear Amplifier Fully Assembled Evaluation Board
PACKAGE BASE GND

RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A4 990216
2-89
RF2128P
Absolute Maximum Ratings Parameter
Supply Voltage (VCC) Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load Operating Ambient Temperature Storage Temperature
Rating
-0.5 to +7.5 -0.5 to +5.5 125 +12 20:1 -40 to +85 -40 to +150
Unit
VDC V mA dBm C C
Refer to "Handling of PSOP and PSSOP Products" on page 16-15 for special handling information.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
2
POWER AMPLIFIERS
Parameter
Overall
Frequency Range Maximum Output Power 1dB Compression Output Power Total CW Efficiency Small-signal Gain Second Harmonic Third Harmonic Isolation Input VSWR Input Impedance Noise Figure
Specification Min. Typ. Max.
1900 to 2500 +22 >+24 +21 33 28 -23 -19 15 2:1 50 7 +17 -27 -40 -44 30
Unit
Condition
T=25 C, VCC =5V, VPD =5.0V, Freq=2400MHz
MHz dBm dBm dBm % dB dBc dBc dB dB dBm dBc dBc dBc %
VCC =5.0V, VPD =5.0V, PIN =-3.0dBm VCC =6.0V, VPD =5.5V, PIN =0dBm Maximum output
VPC =0.2V
Two-tone Specification
Average Two-Tone Power IM3 IM5 IM7 Two-Tone Power-Added Efficiency PEP-3dB POUT =+14dBm for each tone POUT =+14dBm for each tone POUT =+14dBm for each tone
Power Down Control
Power Down "ON" Power Down "OFF"
VCC 0
5 3.0 to 6.5 50 85
V 1.2 V
V V mA mA A
Voltage supplied to the input; device is "on" Voltage supplied to the input; device is "off" Specifications Operating Operating Idle At maximum output power Power Down
Power Supply
Voltage Current Current
65 10
2-90
Rev A4 990216
RF2128P
Pin 1 Function VCC2 Description
Power supply for the driver stage and interstage matching. External matching on this pin is required to optimize the gain. The matching on this port also greatly affects the input impedance. A decoupling capacitor of 330pF is required, together with a series RC for tuning for maximum gain at the desired frequency. See the application information for details. Ground connection for the driver stage. Keep traces physically short and connect immediately to the ground plane for best performance. Power Down control. When this pin is "low", all circuits are shut off. A "low" is typical 1.2V or less at room temperature. When this pin is "high", all circuits are operating normally. A "high" is VCC. If PD is below VCC output power and performance will be degraded. This could be used to obtain some gain control, but results are not guaranteed. RF Input. This is a 50 input, but the actual impedance depends on the matching provided on pin 1. An external DC blocking capacitor is required if this port is connected to a DC path to ground. Ground connection for the output stage. Keep traces physically short and connect immediately to the ground plane for best performance. RF Output and power supply for the output stage. Bias for the output stage needs to be provided on this pin. This can be done through a quarter-wave microstrip that is RF grounded on the other end. For matching to 50, an external series microstrip line is required. Same as pin 6. Power supply for the bias circuits. An external RF bypass capacitor of 22pF is required. Keep the traces to the capacitor as short as possible, and connect the capacitor immediately to the ground plane. Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device may be required.
Interface Schematic
2 3
GND1 PD
2
POWER AMPLIFIERS
RF OUT 2 pF
4 5 6
RF IN GND2 RF OUT
7 8 Pkg Base
RF OUT VCC1 GND

VCC (PCB mat'l: FR-4, Thickness: 0.031") 22 pF BIAS CIRCUITS 8 7 6 5 PACKAGE BASE GND L=220 mil, W=10 mil
330 pF 50 strip L=100 mil L=100 mil, W=20 mil 1 2 33 pF VPD RF IN 8 pF 3 4
22 pF
67 , 0.20"
100 , 200 mil
Rev A4 990216
2-91
RF2128P

(Download Bill of Materials from www.rfmd.com.)
2128401 Rev C P1
2
POWER AMPLIFIERS
VCC C5 1 F C3 22 pF C4 330 pF 50 strip L=100 mil L=100 mil, W=20 mil 1 2 3 4 PACKAGE BASE 50 strip C1 8 pF 100 , 200 mil GND BIAS CIRCUITS 8 7 6 5 L=220 mil, W=10 mil C6 22 pF
P1-1
1 2
VCC GND PD
P1-3
3
PD
C2 33 pF
67 , 0.20"
C7 2 pF
50 strip
RF OUT J2
RF IN J1
(PCB mat'l: FR-4, Thickness: 0.031")
!"# "
2-92
Rev A4 990216

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